论文部分内容阅读
采用受热激发电流和高频C—V测量技术,研究了MOS电容器中辐照引起的空穴俘获和界面态与器件加工的相互关系。我们发现、多晶硅栅的制备使研究的所有栅氧化物都酷似用氢氧火成法生长的那样。研究了氧化后退火(POA)在形成空穴和产生界面态的过程中所起的作用。从测量结果可以看出,POA使可变成空穴陷阱的二氧化硅的键“变弱”,并且在有OH时导致某种空穴陷阱的湮灭,同时又产生一些新种类的空穴陷阱和界面态。讨论了可能的模型和界面态分布。我们还发现,用中带电压漂移来测量这些MOS器件中的空穴俘获并不都是有效的。
The relationship between the hole trapping and interface states caused by irradiation in MOS capacitors and the processing of devices was studied by using the heated excitation current and high-frequency C-V measurement technology. We found that the polysilicon gate was prepared so that all the gate oxides studied resembled those grown by oxy-hydrogen. The effect of post-oxidation annealing (POA) on the formation of holes and interface states was investigated. It can be seen from the measurement results that POA “weakens” the bonds of silicon dioxide that can become a hole trap and causes the annihilation of some hole trap when there is OH and at the same time some new kinds of hole traps And the interface state. The possible models and interface states are discussed. We have also found that it is not always effective to measure hole-trapping in these MOS devices with medium voltage drift.