半导体中深能级杂质对半导体材料的物理性质和半导体器件的性能有重要影响。本文概述了近年来应用势垒电容研究半导体中深能级杂质的一些主要方法,特别是利用含有深能级杂质的p—n结(或Schottky 结)电容与时间有关的瞬态电容法,并且讨论了解释这些测量结果的理论模型。研究深能级杂质的 DLTS 法能比较迅速、精确地测定深能级杂质的多种参数,在此基础上进一步改进,从而提高测量精度。 Deep-level impurities in semiconductors have a significant impact on the physical properties of semiconductor materials and the performance of semiconductor devices. In this paper, we summarize some of the major approaches to the study of deep level impurities in semiconductors using barrier capacitors in recent years, in particular the time-dependent transient capacitance approach using p-n junction (or Schottky junction) capacitance with deep level impurities, and The theoretical model explaining these measurements is discussed. The DLTS method for studying deep level impurities can measure various parameters of deep level impurities more rapidly and accurately, and further improve on this basis to improve the measurement accuracy.