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为了更好地研究温度对碳化硅结势垒肖特基二极管(SiC JBS)静态电学参数的影响,我们成功制备了1.2 k V SiC JBS并对其在25℃~150℃温度范围内的静态I-V特性进行了研究。结果显示,常温工况下,所制器件在偏压为1.5 V时的正向电流可以达到5 A,而反向击穿电压高于1 300 V,具有良好的正、反向静态特性;高温工况下(150℃),所制器件可以正常工作。随着温度的升高,器件的肖特基势垒高度及理想因子基本保持不变,具有良好的稳定性。正向工作时,由于材料迁移率的下降,器件导通电阻随着温度的升高而不断增大(为正温度系数);反向工作时,击穿电压没有随着温度的升高而退化,漏电流则随着温度的升高而不断上升,低压时150℃状态下漏电流相较于常温状态的上升了1.5个数量级,而高压时同样情况下仅上升了1个数量级,符合雪崩击穿机制。
In order to study the effect of temperature on the static electrical parameters of SiC JBS SiC JBS, we successfully fabricated a 1.2 k V SiC JBS and measured its static IV at 25 ℃ ~ 150 ℃ Characteristics have been studied. The results show that the forward current of the fabricated device can reach 5 A at a bias voltage of 1.5 V and the reverse breakdown voltage is higher than 1 300 V under normal temperature conditions, with good positive and negative static characteristics. The high temperature Operating conditions (150 ℃), the device can work properly. With the increase of temperature, the device Schottky barrier height and ideal factor remain basically unchanged, with good stability. In forward operation, the on-resistance of the device increases with temperature (positive temperature coefficient) due to the decrease of material mobility. In the reverse direction, the breakdown voltage does not degrade with increasing temperature , The leakage current increases with temperature. Under low pressure, the leakage current at 150 ℃ is 1.5 orders of magnitude higher than that at room temperature, while it only increases by an order of magnitude when the voltage is high. Wear mechanism.