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对经２５０°Ｃｐ型热处理获得的Ｈｇ１－ｘＣｄｘＴｅ（ｘ≈０．２４）ＭＢＥ材料进行变温霍耳测量和理论拟合计算，由此得到ＨｇＣｄＴｅ－ＭＢＥ材料的受主浓度为２～３×１０１６ｃｍ－３，残余施主浓度为５×１０１５ｃｍ－３左右．两者相比显示材料的补偿度较低，拟合得到的汞空位受主能级为１５～１８ｍｅＶ，这也与低补偿情况下的理论预计值相符，结果表明以往ｐ型ＨｇＣｄＴｅ外延材料补偿度较大并非外延工艺的固有特性．
The Hg1-xCdxTe (x≈0.24) MBE material obtained by the heat treatment at 250 ° Cp was subjected to the temperature-changing Hall measurement and the theoretical fitting calculation to obtain the HgCdTe-MBE material with an acceptor concentration of 2~3 × 10 16 cm- 3, the residual donor concentration of about 5 × 1015cm-3. The results show that the material has a lower degree of compensation, and the fitted acceptor level of mercury vacancies is 15 ~ 18meV, which is in good agreement with the theoretically predicted value under low compensation. The results show that in the past, the compensation of HgCdTe epitaxial material Larger than the inherent characteristics of the epitaxial process.