论文部分内容阅读
采用氟化钨(WF6)和甲烷(CH4)为前驱体,采用等离子体增强化学气相沉积(PECVD)方法制备具有纳米结构的碳化钨薄膜。采用SEM、XRD、EDS等方法表征了碳化钨薄膜的形貌、晶体结构和化学组成。通过表征,表明在前驱体混合气体中的甲烷与氟化钨气体的流量比(碳钨比)为20、基底温度为800℃的条件下得到的碳化钨薄膜是由直径为20～35nm的圆球状纳米晶构成。通过分析影响薄膜的晶体结构、化学组成的因素后,认为要得到具有纳米晶结构的碳化钨薄膜,主要应控制前驱体气体中的碳钨比以及基底温度。
Tungsten carbide thin films with nanostructures were prepared by plasma enhanced chemical vapor deposition (PECVD) using tungsten fluoride (WF6) and methane (CH4) as precursors. The morphology, crystal structure and chemical composition of tungsten carbide films were characterized by SEM, XRD and EDS. Through characterization, it is shown that the tungsten carbide film obtained under the conditions of a flow ratio of methane to tungsten fluoride gas (carbon to tungsten ratio) of 20 in the precursor mixed gas and a substrate temperature of 800 ° C is composed of a circle of 20 to 35 nm in diameter Spherical nanocrystalline composition. By analyzing the factors influencing the crystal structure and chemical composition of the thin film, it is considered that to obtain the tungsten carbide thin film with the nanocrystalline structure, the carbon-tungsten ratio in the precursor gas and the substrate temperature should be controlled.