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在低合金钢基体上磁控溅射镀Cr/Cu双层膜,电沉积铜-金刚石复合过渡层,在热丝CVD系统中沉积了连续的金刚石膜。用压痕实验研究了所沉积的金刚石膜/基结合性能,用扫描电镜(SEM)、X射线(XRD)、拉曼光谱表征了金刚石膜的表面形貌、相结构和内应力。结果表明,经CVD金刚石沉积后Cr层转化为铬铁碳化物层,阻止了Fe对界面金刚石的石墨化,并部分缓冲相变应力;较软的Cu层能有效缓解相变应力和热应力,降低了所沉积的金刚石膜内应力;用441N载荷对所沉积的金刚石膜进行压痕评估,压痕外缘只产生环状裂纹,表明膜基结合力较高。
A Cr / Cu bilayer film was magnetron sputter-deposited on a low-alloy steel substrate, a copper-diamond composite transition layer was electrodeposited, and a continuous diamond film was deposited in the hot filament CVD system. The indentation experiments were carried out to study the diamond film / matrix bonding properties. The surface morphology, phase structure and internal stress of diamond films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The results show that the transformation of Cr layer into ferrochrome carbide layer after CVD diamond deposition prevents the graphitization of Fe to interface diamond and partially buffers the phase transformation stress. The softer Cu layer can effectively relieve the phase transformation stress and thermal stress, Reducing the internal stress of deposited diamond film; indentation evaluation of the deposited diamond film with a load of 441N produced only ring-shaped cracks on the outer edge of the indentation, indicating that the film-based bonding strength is high.