日本知名半导体制造商罗姆株式会社日前面向EV/HEV车(电动汽车/混合动力车)和工业设备的变频驱动,开发出符合SiC器件温度特性的可在高温条件下工作的SiC功率模块。该模块采用新开发的高耐热树脂,世界首家实现了压铸模类型、225℃高温下工作,并可与现在使用Si器件的模块同样实现小型和低成本封装,在SiC模块的普及上迈出了巨大的一步。这种模块是600 V/100 A三相变频,搭载了罗姆的6个SiC-SBD和6个SiC沟槽MOSFET,经验证工作温度可高达225℃。此外,该模块使用范围可达1200 V级。因此,与传统的Si-IGBT模块相比,其损耗大大降低,不仅可实现小型化,而且与以往的母模类型SiC模 A leading semiconductor manufacturer in Japan, ROHM Corporation has developed SiC power modules that operate at high temperatures in line with the temperature characteristics of SiC devices for the variable frequency drive of EV / HEV vehicles (electric vehicles / hybrid vehicles) and industrial equipment. The module uses a newly developed high heat-resistant resin, the world’s first die-casting mold type, 225 ℃ high temperature work, and can now use the Si device module to achieve the same small and low-cost package, SiC module popularity A huge step forward. This module is a 600 V / 100 A three-phase frequency converter with six SiC-SBDs and six SiC trench MOSFETs from Rohm, with a proven operating temperature of up to 225 ° C. In addition, the module can be used up to 1200 V level. Therefore, compared with the traditional Si-IGBT module, its loss is greatly reduced, not only miniaturization, but also with the previous mother-type SiC mold