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阐述了等电子杂质、掺Er硅、硅基量子结构(包括量子阱、量子线和量子点)及多孔硅的发光机理,综述了90年代以来a-Si/SiO2、SiGe/Si等Si基异质结构材料的优异特性和诱人的应用前景,着重介绍了能带工程为Si基异质结构带来的新特性、新功能,重点介绍了硅基量子点的制备和发光机理,综述了半导体量子点材料的最新发展动态和发展趋势。
The luminescence mechanism of isoelectronic impurities, Er-doped silicon, silicon-based quantum structures (including quantum wells, quantum wires and quantum dots) and porous silicon are described. The fundamental differences of Si-based a-Si / Excellent features of structural materials and attractive prospect of application, emphatically introduces the new features and new functions brought by the band engineering for the Si-based heterostructure, especially introduces the preparation and the luminescence mechanism of the silicon-based quantum dots, Quantum dot materials, the latest developments and trends.