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采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积出晶粒尺寸为30nm的均匀金刚石膜。生长过程中,预先加6A偏流生长1h,然后在0.8kPa条件下,无偏流生长3h。光致发光谱中存在4个发光中心分别位于1.682eV,1,564eV,1,518eV和1.512eV的发光峰。1.682eV处发光峰源于衬底硅原子掺杂于膜中引起的缺陷;其他发光峰源于金刚石晶格振动声子。光致发光强度越大对应的缺陷密度越大,从而降低了场发射域值电场强度,其关键可能源于金刚石膜电导型晶界。
An uniform diamond film having a grain size of 30 nm was deposited on a silicon wafer by electron-assisted hot filament chemical vapor deposition (EA-HFCVD). In the growth process, pre-6A bias current growth 1h, then 0.8kPa conditions, no bias flow growth 3h. In the photoluminescence spectrum, there are four luminescence peaks with luminescence centers of 1.682eV, 1,564eV, 1,518eV and 1.512eV, respectively. The luminescence peak at 1.682eV originated from the defects caused by the doping of silicon atoms into the film. The other luminescence peaks originated from the lattice vibration phonons of diamond. The larger the photoluminescence intensity is, the larger the defect density is, which reduces the electric field strength of the field emission field. The key point may come from the grain boundary conductivity of diamond film.