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采用真空熔炼法合成(Bi1-xSnx)2Te2.7Se0.3合金,再通过热蒸发技术在473K玻璃基体上沉积了厚800 nm的Sn掺杂Bi2Te2.7Se0.3热电薄膜。利用X射线衍射技术对薄膜的相结构进行表征;采用表面粗糙度测量仪测定薄膜厚度;采用四探针法和温差电动势法分别测量薄膜的电阻率和Seebeck系数;采用薄膜的电阻率和Seebeck系数Sn掺杂浓度对(Bi1-xSnx)2Te2.7Se0.3薄膜热电性进行分析。结果表明,Sn掺杂浓度为0.003时,热电功率因子提高到12.8μW/K2.cm;Sn掺杂浓度从0.004增加到0.01,薄膜为P型半导体,热电功率因子减小。
(Bi1-xSnx) 2Te2.7Se0.3 alloy was synthesized by vacuum melting method, and a Sn-doped Bi2Te2.7Se0.3 thermoelectric thin film with a thickness of 800 nm was deposited on the 473K glass substrate by thermal evaporation technique. The phase structure of the film was characterized by X-ray diffraction. The film thickness was measured by surface roughness measuring instrument. The resistivity and Seebeck coefficient of the film were measured by four-probe method and thermoelectromotive force method. The resistivity and Seebeck coefficient Sn doping concentration of (Bi1-xSnx) 2Te2.7Se0.3 thin film thermoelectric properties were analyzed. The results show that when the doping concentration of Sn is 0.003, the thermoelectric power factor increases to 12.8μW / K2.cm, the doping concentration of Sn increases from 0.004 to 0.01, and the film is a P-type semiconductor with the thermoelectric power factor decreasing.