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本文用化学腐蚀方法,从含有漩涡缺陷的原生CZ硅单晶中分离出尺寸在1000—6000A间的氧沉淀,制成萃取复型样品,用TEM对氧沉淀作微区电子衍射分析。同时,观察硅薄膜中漩涡缺陷的TEM象,确定了二者的对应关系。结果表明,构成漩涡缺陷的氧沉淀主要是呈方形片的热液石英(keatite,silica k)及少量呈六角片的α方英石(α-cristobalite),沉淀片周边沿<110>方向,惯习面前者的为{100},后者的为{111}。样品的红外吸收光谱表明,方片状热液石英沉淀可能与1224cm~(-1)吸收峰相对应。
In this paper, the chemical precipitation method was used to separate the oxygen precipitates with the size of 1000-6000 A from the native CZ silicon single crystals containing eddy defects to make the extraction complex samples. The oxygen precipitates were analyzed by TEM. At the same time, observe the TEM image of vortex defects in the silicon film, to determine the correspondence between the two. The results show that the oxygen precipitates which constitute the eddy defects mainly consist of square pieces of keatite (silica k) and few hexagonal α-cristobalites. The periphery of the precipitates is in the <110> direction, The person’s {100}, the latter’s {111}. Infrared absorption spectra of the samples indicate that the sheet-like hydrothermal quartz deposit may correspond to the absorption peak of 1224 cm -1.