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运用反应磁控溅射技术制备了应用于Ｇｂ级ＤＲＡＭ中的ＴｉＯ２薄膜。本文报道了对该薄膜进行Ｘ射线衍射结构分析所得到的详细结果，并给出了薄膜结构同热处理条件之间的关系
The TiO2 films used in Gb DRAMs were prepared by reactive magnetron sputtering. In this paper, the detailed results obtained by X-ray diffraction analysis of the film are reported, and the relationship between the film structure and the heat treatment conditions is given