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采用提拉法生长了白光发光二极管(LED)用Ce,Mn∶YAG单晶,通过X射线衍射(XRD)测试、X射线吸收精细结构(XAFS)测试、吸收光谱和激发发射光谱对其晶相结构、掺杂Mn的价态和光谱特性进行了表征,并研究了晶片厚度及驱动电流的变化对LED器件光电性能的影响.在460 nm蓝光的激发下,Ce,Mn∶YAG单晶的发射光谱可由中心波长526和566 nm的宽带发射峰复合而成.XAFS测试结果表明,所得单晶中掺杂Mn的价态以正二价为主.由于Ce3+和Mn2+在YAG单晶中存在能量传递,荧光光谱中566 nm处的橙色发射峰对应于Mn2+离子4T1→6A1能级的辐射跃迁.
The Ce, Mn: YAG single crystal of white light-emitting diode (LED) was grown by Czochralski method. The X-ray diffraction (XRD), X-ray absorption fine structure (XAFS) Structure, the valence and spectral properties of doped Mn were investigated, and the influence of the variation of thickness and driving current on the optoelectronic properties of LED devices was investigated. The emission of Ce, Mn:YAG single crystal under the excitation of 460 nm blue light The spectra can be synthesized from broadband emission peaks at central wavelengths of 526 and 566 nm. The XAFS results show that the doping Mn in the obtained single crystal is predominately divalent. Due to the energy transfer between Ce3 + and Mn2 + in YAG single crystal, The orange emission peak at 566 nm in the fluorescence spectrum corresponds to the radiative transition at the 4T1 → 6A1 level of Mn2 + ions.