根据沉积非晶硅薄膜的实际PECVD反应室结构建立其几何模型,并在考虑反应室中表面化学反应的条件下建立三维热流场数值分析模型。据此对非晶硅沉积过程进行模拟,得到薄膜沉积过程中化学组分的分布情况以及薄膜的平均沉积速率。通过正交试验法对非晶硅薄膜沉积的工艺参数进行数值模拟分析,得出影响沉积速率的工艺参数的主次顺序;并经过实验验证,模拟结果与实验结果具有一致性。数值模拟可加深对工艺过程的理解,为合理确定PECVD工艺参数提供理论基础。 The geometrical model of the PECVD reaction chamber is established based on the deposited amorphous silicon thin film. The numerical model of the three-dimensional heat flow field is established under the consideration of the surface chemical reaction in the reaction chamber. Based on this, the deposition of amorphous silicon was simulated and the distribution of chemical components and the average deposition rate of the films were obtained. Through orthogonal experiment, the process parameters of amorphous silicon thin film deposition were analyzed by numerical simulation, and the order of the process parameters influencing the deposition rate was obtained. The experimental results show that the simulation results agree well with the experimental results. Numerical simulation can deepen the understanding of the process and provide a theoretical basis for the reasonable determination of PECVD process parameters.