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根据a-Si_(1-x)Ge_x:H材料的特性和Eg与μ_p随X增大而下降的实验数据,采用:α=β~2(hv-Eg)~2/hv关系和数字积分方法,对由Egmax=1.85ev和Egmin=1.45ev所构成的能隙梯度化nip a-Si太阳电池作了分析和计算。结果表明,在假定非掺杂i层的τ_p不随X作显著变化的条件下,厚为1μ的i层中产生的空穴得以充分收集,在AM1下产生了29mA/cm~2的Jsc。采用Jf=Jrg(即二极管暗电流等于耗尽区复合电流)计算转换效率,得到了η=26.2％的理论极限值,用填充因子FF=0.7和平均反射率R=10％对理想条件下得到的理论极限值作修正,得到了a-Si太阳电池的有效面积效率η_e≈20％。
According to the characteristics of a-Si_ (1-x) Ge_x: H material and the decrease of Eg and μ_p with the increase of X, the relationship of α = β ~ 2 (hv-Eg) ~ 2 / hv and the numerical integration method , The energy gap gradient nip a-Si solar cell formed by Egmax = 1.85ev and Egmin = 1.45ev was analyzed and calculated. The results show that under the assumption that the τ_p of the undoped i layer does not change significantly with X, the holes generated in the i layer with a thickness of 1 μ are fully collected, and the Jsc of 29 mA / cm ~ 2 is generated at AM1. The conversion efficiency was calculated using Jf = Jrg (that is, the diode dark current is equal to the depletion region recombination current), and the theoretical limit of η = 26.2% was obtained. Under ideal conditions, the fill factor FF = 0.7 and the average reflectivity R = The theoretical limit for correction, get the a-Si solar cell effective area efficiency η_e ≈ 20%.