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本文报道了光吸收谱的恒定光电流(ConstantPhotocurrentMethod)测量法,并用其测量了高速沉积的氢化非晶硅薄膜(a-Si:H)的光吸收谱,同时观测了StaeblerWronski(SW)效应中样品吸收系数的变化。
In this paper, the constant photoplethysmography of light absorption spectra was reported and used to measure the light absorption spectra of hydrogenated amorphous silicon thin films (a-Si: H) deposited at high deposition rates. Meanwhile, the samples of StaeblerWronski (SW) Changes in absorption coefficient.