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文章中,通过磁控溅射制备了界面处插入4d,5d元素薄层(包括Ru,Pd,Ag和Au)的Ta/NiFe/Ta多层膜,并对它们的磁输运和磁性以及微结构进行了测试和表征.结果显示,Pd和Pt一样界面效应显著,能有效地提高NiFe薄膜退火前后的AMR比值,并抑制磁性死层.表面能比较小、熔点相对低的插层材料Ag,Au在退火过程中容易通过晶界扩散,强烈破坏其AMR性能.对于熔点高、表面能比较大的插层材料如Ru,磁性死层同样得到了抑制,NiFe薄膜的温度稳定性也可以得到提高.结果表明界面插层从界面电子自旋-轨道散射、界面死层和界面原子扩散等方面深刻影响NiFe薄膜的AMR.
In this paper, Ta / NiFe / Ta multilayer films with 4d, 5d elemental thin films (including Ru, Pd, Ag and Au) were prepared by magnetron sputtering and their magnetic transport and magnetic properties The results show that Pd and Pt have the same interfacial effect, which can effectively improve the AMR ratio of the NiFe film before annealing and post-annealing, and inhibit the magnetic dead layer. The intercalation material Ag with relatively small surface energy and relatively low melting point, Au diffuses easily through the grain boundary during the annealing process, strongly destroying its AMR properties.For intermetallics with high melting point and large surface energy, such as Ru and magnetic dead layers are also suppressed, and the temperature stability of NiFe films can also be improved The results show that the interface intercalation profoundly affects the AMR of the NiFe thin films in the aspects of interfacial electron spin-orbit scattering, interface dead layer and interfacial atom diffusion.