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提出了一种基于共源共栅及电阻并联反馈结构的超宽带低噪声放大器(LNA)。在3~10GHz的工作频段范围内,采用电阻并联反馈和π型匹配网络结构,实现宽带输入匹配,并有效减小整个电路的噪声系数。利用共源共栅输出漏极的并联峰化技术,实现平坦的高频增益及噪声的有效抑制。采用源极电感(Ls)负反馈及晶体管M3构成的源极跟随器,提高电路的线性度和输出匹配。基于TSMC 0.18μm RFCMOS工艺库,采用Cadence Spectre RF,对LNA原理图和版图进行仿真。仿真结果显示,该LNA的S11和S22均小于-10dB,S12小于-32dB,S21为11.38±0.36dB,噪声系数为3.37±0.2dB,P1dB和IIP3分别为-9.41dBm和-2.7dBm。设计的LNA在带宽内具有良好的输入输出匹配、较好的反向隔离度及线性度、高且平坦的增益和低且平坦的噪声系数。
An ultra-wideband low noise amplifier (LNA) based on cascode and shunt feedback structure is proposed. In the 3 ~ 10GHz operating frequency range, the use of parallel feedback and pi π matching network structure, broadband input matching, and effectively reduce the noise figure of the entire circuit. The cascade peaking technique of cascode output drain is used to achieve a smooth high-frequency gain and effective suppression of noise. Source follower with source inductor (Ls) negative feedback and transistor M3 is used to improve circuit linearity and output matching. Based on the TSMC 0.18μm RFCMOS library, Cadence Specter RF was used to simulate the LNA schematic and layout. The simulation results show that S11 and S22 of the LNA are less than -10dB, S12 is less than -32dB, S21 is 11.38 ± 0.36dB, noise figure is 3.37 ± 0.2dB, P1dB and IIP3 are -9.41dBm and -2.7dBm respectively. The designed LNA has good input-output matching within the bandwidth, good reverse isolation and linearity, high and flat gain, and low and flat noise figure.