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采用一种新的自行设计的磁控弧光增强等离子体化学气相沉积法制备立方氮化硼(c-BN)薄膜.现已成功地在单晶硅上制备出了含量较高的立方氮化硼(c-BN)薄膜.制备出的薄膜用傅立叶红外(FTIR)光谱和 X射线衍射(XRD)谱来表征.同时研究了各个沉积参数(基底直流负偏压、弧光等离子体放电电流、气体流量比)对立方氮化硼薄膜制备的影响.
A new self-designed magnetron arc enhanced plasma enhanced chemical vapor deposition method was used to prepare cubic boron nitride (c-BN) thin films.Now, cubic boron nitride (c-BN) thin films were prepared.The films were characterized by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) spectroscopy.The deposition parameters (DC bias, arc plasma discharge current, gas flow rate Ratio) on the preparation of cubic boron nitride films.