【摘 要】
：
The n-type conductive BaNb0.3 Ti0.7O3 thin films were grown on SrTiO3 (001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3Ti0.7O3 f
【机 构】
：
Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics,Chinese
论文部分内容阅读
The n-type conductive BaNb0.3 Ti0.7O3 thin films were grown on SrTiO3 (001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3Ti0.7O3 films with (001) orientation are epitaxially grown on SrTiO3 substrates, as confirmed by x-ray diffraction techniques. The root-mean-square surface roughness of the deposited thin films is measured to be 0.24 nm by atomic force microscopy. The resistivity, carrier concentration and mobility of the BaNb0.3Ti0.7O3 thin film are 5.9 × 10-4 Ω. cm, 1.8 × 1021cm-3 and 10. 7cm2.V-1.s-1 at room temperature,respectively, which are the best values in Nb-doped BaTiO3 thin films reported so far to our knowledge.
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