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应用半经典的蒙特卡罗方法,模拟计算了处于不同缺陷条件下的砷化镓在超快激光激发下的载流子输运行为及其相应的太赫兹波发射性能。计算结果表明,缺陷的类型和浓度都会对太赫兹波的脉宽和峰高产生显著的影响。分别采用500 keV和1.5 MeV的氮离子在不同剂量下辐照了半绝缘的砷化镓和掺铁磷化铟样品,并将辐照样品制备成太赫兹波发射天线。通过对辐照样品的太赫兹波发射能力进行测量,发现不同辐照条件下制备的太赫兹发射天线其太赫兹波的脉宽基本一致,只有峰高随辐照产生的缺陷浓度增大呈现先增大后减小的变化。结合理论计算和实验测量结果,分析讨论了光电导材料太赫兹波发射的缺陷机制。
The semiclassical Monte Carlo method was used to simulate the carrier transport behavior and the corresponding terahertz emission behavior of gallium arsenide under ultrafast laser excitation under different defects. The calculated results show that both the type and concentration of defects have a significant effect on the pulse width and peak height of terahertz waves. Semi-insulating gallium arsenide and indium-doped indium phosphide samples were irradiated with 500 keV and 1.5 MeV nitrogen ions at different doses, respectively, and irradiated samples were prepared as terahertz-wave transmitting antennas. By measuring the terahertz wave emission capability of the irradiated samples, it is found that the terahertz transmitting antenna prepared under different irradiation conditions has basically the same pulse width of the terahertz wave. Only the peak height increases with the increase of the irradiation concentration Increase and then decrease the change. Combined with theoretical calculation and experimental measurement results, the defect mechanism of terahertz wave emission in photoconductive materials is analyzed and discussed.