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The impact of interfacial trap states on the stability of amorphous indium-gallium-zinc oxide thin film transistors is studied under positive gate bias stress.With increasing stress time,the device exhibits a large positive drift of threshold voltage while maintaining a stable sub-threshold swing and a constant field-effect mobility of channel electrons.The threshold voltage drift is explained by charge trapping at the high-density trap states near the channel/dielectric interface,which is confirmed by photo-excited charge-collection spectroscopy measurement.