论文部分内容阅读
将硅置于高纯石墨坩埚中使其在高温条件下熔化 ,坩埚内壁石墨自然熔解于硅熔体中形成碳饱和的硅熔体 ,在石墨表面形成 Si C多晶薄层并通过改变工艺条件使薄层变厚形成厚约 0 .5 mm的 Si C体材料。用 X射线光电子能谱 ( XPS)、X射线衍射 ( XRD)、Raman散射等手段对样品进行了检测分析。实验结果表明所制备样品为 3C- Si C多晶体。
The silicon is placed in a high-purity graphite crucible so that it melts at high temperature. The graphite in the inner wall of the crucible naturally melts in the silicon melt to form a carbon-saturated silicon melt. A thin layer of SiC polycrystalline is formed on the surface of the graphite, and by changing the process conditions Thickening the thin layer to form Si C body material with a thickness of about 0.5 mm. The samples were analyzed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering. The experimental results show that the prepared sample is 3C-Si C polycrystal.