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在室温至77K范围内,测量质子轰击条形GaAs-Al_xGa_(1-x)As双异质结激光器正向伏安特性,发现很多激光器在低温下产生负阻或击穿的异常特性,这可能是由于在GaAs-Al_xGa_(1-x)As n-N异质结有数量较多的界面态以及N-Al_xGa_(1-x)As外延层掺杂浓度偏小造成的。在低温条件下,处于反向偏置的n-N异质结,由于上述原因而等效成为背靠背双肖特基二极管,当外加电压增加时发生热电击穿,出现负阻或电压跳变。
In the range of room temperature to 77K, the forward voltammetry characteristics of bar-like GaAs-Al_xGa_ (1-x) As double heterostructure lasers measured by proton bombardment were measured and it was found that many lasers produced negative resistance or breakdown abnormalities at low temperature. Is due to the smaller number of interface states and the smaller doping concentration of the N-Al_xGa_ (1-x) As epitaxial layer in the GaAs-Al_xGa_ (1-x) As nN heterojunction. At low temperatures, the n-N heterojunction in reverse bias is equivalent to a back-to-back dual Schottky diode for the reasons described above. Thermal shock occurs as the applied voltage increases, causing a negative resistance or voltage jump.