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磁控溅射系统在恒定Ar气压和Ar气流流量下,使用不同射频溅射功率在Si(100)衬底上分别沉积Ca薄膜;随后,800℃真空退火1 h.立方相的Ca2Si薄膜首次、单独、直接生长在Si(100)衬底上.实验结果指出,在多相共生的Ca-Si化合物中,沉积Ca薄膜时的射频溅射功率影响了立方相Ca2Si薄膜的质量;最优化的溅射功率是85 W.另外,退火温度为800℃时,有利于单一相Ca2Si的独立生长.并且,退火时间也是关键因素.
The magnetron sputtering system deposited Ca thin films on Si (100) substrate with different RF sputtering powers at constant Ar gas pressure and Ar gas flow rate, respectively, followed by vacuum annealing at 800 ℃ for 1 h. For the first time, And grown directly on the Si (100) substrate.The experimental results show that the RF sputtering power in the Ca-Si compound deposited in multi-phase symbiosis affects the quality of the cubic Ca2Si film. The optimal sputtering The shot power is 85 W. In addition, the annealing temperature is 800 ℃, is conducive to the independent growth of Ca2Si single phase, and annealing time is also a key factor.