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对抛光液新旧程度、抛光时间、抛光腐蚀深度等条件对多晶硅片抛光与位错刻蚀显示效果的影响进行实验研究。发现多晶硅片抛光效果与抛光时间无直接对应关系,而取决于抛光腐蚀深度。当硅片抛光腐蚀深度小于45μm时,抛光效果不佳,而大于此深度时,抛光效果良好。多晶硅片抛光腐蚀深度会明显影响之后刻蚀显示的位错密度,较浅时得到的位错密度值将偏高,影响区的深度大于19μm。提出一个表征化学腐蚀抛光液新旧程度的参数——硅溶解系数K,给出了抛光腐蚀速率、抛光液表观色泽与K值之间的明确对应关系。
Polysilicon polishing and dislocation etching were studied experimentally on the conditions such as the newness of the polishing solution, the polishing time and the polishing depth. It is found that there is no direct relationship between the polishing effect of polycrystalline silicon wafer and polishing time, but it depends on the depth of polishing corrosion. When the wafer polishing corrosion depth is less than 45μm, the polishing effect is poor, and greater than this depth, the polishing effect is good. The polycrystalline silicon wafer polishing depth will obviously affect the dislocation density of the later etching, and the higher the dislocation density value will be, and the depth of the affected area will be larger than 19μm. A new parameter, Si, is used to characterize the newness of the chemical etching solution. The relationship between the polishing rate and the apparent color of the polishing solution and the K value is given.