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研究了 H、O 等残留杂质对低压 MOCVD 法制备的掺锌 In_(0.5)(Ga_(1-x)Al_x)_(0.5)P 中锌元素电活性的影响。具有 p 型顶层的掺锌 InGaAsP 中锌电活性相当低而氢浓度浓效高。在具有 n 型顶层的掺锌 InGaAsP 中锌的电活性相当高且没有检测出氢。在具有 p 型顶层的 In-GaAsP 中锌受主可能被氢钝化了。InGaAsP 中的氧浓度强烈依赖于铝组份,当 x>0.4时,氧浓度突然升
The effects of residual impurities such as H and O on the electrochemical activity of Zn in Zn_ (0.5) (Ga_ (1-x) Al_x) _ (0.5) P prepared by low pressure MOCVD were investigated. Zinc-doped InGaAsP with a p-type top layer has rather low electrical activity of zinc and high hydrogen concentration. Zinc has a very high electrical activity in zinc-doped InGaAsP with an n-type top layer and no hydrogen is detected. The zinc acceptor may be hydrogen-deactivated in In-GaAsP with a p-type top layer. The oxygen concentration in InGaAsP strongly depends on the aluminum component, and when x> 0.4, the oxygen concentration suddenly rises