计算了不同厚度的碳化硅(SiC)薄膜的吸收率,发现厚度在几十至100μm、上下表面平行的碳SiC薄膜的热辐射具有良好的干涉性质.由于SiC独特的光学性质,薄膜对10μm的入射波吸收率达到0.98,接近黑体的吸收率;而对于10.5至12.4μm波段的热辐射,又几乎变得不吸收.计算还表明,SiC薄膜的半球发射率跟温度有关,在300至500K之间,半球发射率比较高. The absorption rates of SiC films with different thicknesses were calculated and it was found that the thermal radiation of SiC films with thickness of several tens to 100μm and parallel upper and lower surfaces had good interference properties.Because of the unique optical properties of SiC, The absorption rate of incident wave reaches 0.98, approaching the absorption rate of blackbody, and almost does not absorb for the heat radiation of 10.5 to 12.4μm band. The calculation also shows that the hemispherical emissivity of SiC film is related to the temperature at 300 to 500K Between, the hemispherical emissivity is relatively high.