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介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.
A monolithic integrated circuit based on resonant tunneling diode (RTD) and high electron mobility transistor (HEMT) is introduced, and the structure of RTD and HEMT are superposed and grown on the bottom layer of GaAs by molecular beam epitaxy. Current ratio of 5.2: 1, the peak current density of 22.5kA / cm2.HEMT 1μm gate length, the threshold voltage of -1V.Designed circuit called the monostable - bistable conversion logic (MOBILE) .Experimental results show that The circuit logic is successful, operating frequency up to 2GHz.