ＡｌＧａＮ／ＧａＮ异质结兰光激光器和发光管近年来得到很大的发展．高速和高功率的ＡｌＧａＮ／ＧａＮ异质结场效应管（ＨＦＥＴ）的研究也得到很大的重视．ＡｌＧａＮ 薄层中的Ａｌ组分是决定此类器件的设计和性能的一个重要参量． 传统的测量组分的方法如ＸＰＳ和Ａｕｇｅ AlGaN / GaN heterojunction blue laser and LED have been greatly developed in recent years. The research of high speed and high power AlGaN / GaN Heterojunction Field Effect Transistor (HFET) has also received great attention. The Al component in the AlGaN thin layer is an important parameter that determines the design and performance of such devices. Traditional methods of measuring components such as XPS and Auge