论文部分内容阅读
化合物半导体的液相外延技术,特别是近年来分子束外延(MBE)和金属有机化合物化学气相渡积(MOCVD)技术的进展,为半导体新器件的发展提供了良好的工艺基础.本文分析和讨论了在上述工艺基础上双极型晶体管的能带设计.其中包括宽发射极、宽收集极和能带宽度的设计.讨论了异质发射结附近能带尖峰和基区中速度过冲之间的联系与设计要点.提出了Auger晶体管的概念以及在工艺上如何实现的具体结构.文章最后以微波低噪声双极型晶体营为例,给出了一个具体的能带设计图.
Liquid-phase epitaxy of compound semiconductors, especially the progress of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) in recent years, provide a good technological basis for the development of new semiconductor devices.This paper analyzes and discusses Based on the above process, the band design of the bipolar transistor, including the design of wide emitter, wide collector and the width of the energy band, is discussed. The relationship between the energy band near the heterojunction and the base overshoot The conception of Auger transistor and the concrete structure of how to realize it are put forward.At last, taking the microwave low noise bipolar crystal battalion as an example, a concrete band design is given.