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钨插塞化学机械平坦化(CMP)是极大规模集成电路(GLSI)铜互连多层布线的关键工艺之一。首先研究了钨在碱性条件下化学机械抛光机理;接着采用单因素实验方法分析了抛光液组分中纳米SiO2水溶胶磨料、氧化剂、有机碱(pH调节剂)和表面活性剂对W-CMP速率的影响。最后通过正交优化实验,确定抛光液最优配比为V(纳米SiO2水溶胶)∶V(去离子水)=1∶1,氧化剂体积分数为20 mL/L,pH调节剂体积分数为4 mL/L,表面活性剂体积分数为20 mL/L时,此时抛光液的pH值为10.36,获得的去除速率为85 nm/min,表面粗糙度为0.20 nm。
Tungsten plugs Chemical mechanical planarization (CMP) is one of the key processes for multi-layer wiring of copper interconnects for very large scale integrated circuits (GLSIs). Firstly, the mechanism of chemical mechanical polishing of tungsten under alkaline conditions was studied. Then, the effects of nano-SiO2 hydrosol abrasive, oxidant, organic base (pH adjusting agent) and surfactant in the polishing solution on W-CMP Effect of rate. Finally, the orthogonal experiment was carried out to determine the optimal ratio of V (nano SiO2 hydrosol) to V (deionized water) = 1: 1, the volume fraction of oxidant was 20 mL / L, the volume fraction of pH adjusting agent was 4 mL / L, the volume fraction of surfactant is 20 mL / L, the pH value of the slurry is 10.36, the removal rate is 85 nm / min and the surface roughness is 0.20 nm.