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研究镶嵌在超薄非晶氮化硅(a-SiNx)层之间的双层纳米硅(nc-Si)的电荷存储现象.利用等离子体增强化学气相淀积(PECVD)技术在硅衬底上制备a-SiNx/a-Si/a-SiNx/a-Si/a-SiNx多层薄膜结构.采用常规热退火方法使非晶硅(a-Si)层晶化,形成包含双层nc-Si的金属-氮化物-半导体(MIS)结构.通过电容电压(C-V)特性测量,观测到该结构中由于电荷存储引起的C-V回滞现象,并在室温下成功观察到载流子基于Fowler-Nordheim(F-N)隧穿注入到第一层、第二层nc-Si的两级电荷存储状态.结合电流电压(I-V)特性的测量,对电荷存储的机理进行了深入分析.
To investigate the charge storage phenomenon of double-layered nanocrystalline silicon (nc-Si) embedded in ultra-thin amorphous silicon nitride (a-SiNx) The a-SiNx / a-Si / a-SiNx / a-Si / a-SiNx multilayered thin film structure is prepared by the conventional thermal annealing method to crystallize the amorphous silicon (a-Si) (MIS) structure of the structure, CV hysteresis due to charge storage was observed in the structure by capacitance voltage (CV) characteristic measurement, and carrier was successfully observed at room temperature. Based on the Fowler-Nordheim (FN) tunneling into the two-level charge storage of the first layer and the second layer of nc-Si.According to the measurement of the characteristics of the current voltage (IV), the charge storage mechanism is further analyzed.