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用PECVD技术制备了不同掺磷比的非晶硅薄膜,然后退火改性.红外透射光谱揭示了薄膜内部的键合模式随生长工艺条件变化的规律;测量和分析了非晶硅红外热吸收及电阻温度系数与薄膜结构之间的关系.综合考虑非晶硅电阻率和电阻温度系数两个因素,采用掺杂比0.025,退火温度600℃的薄膜样品进一步研究.
The amorphous silicon films with different phosphorus-doped ratios were prepared by PECVD technique and then annealed.The infrared transmission spectra reveal the regularity of the bonding modes in the films with the growth process conditions, The relation between the temperature coefficient of resistance and the structure of the thin film The film samples with the doping ratio of 0.025 and the annealing temperature of 600 ℃ were further studied considering the amorphous silicon resistivity and the temperature coefficient of resistance.