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应用金相显微镜、能量色散谱仪、X射线衍射仪等对AgGa0.8In0.2Se2晶体中的二相沉淀物进行了观察、测试和分析,发现呈梭状的二相沉淀物存在明显Ag含量缺失。根据EDS测试结果和差热实验数据研究了消除该二相沉淀物的热处理方案,即在含有Ag2Se组分的AgGa0.8In0.2Se2多晶混合粉末包埋下,对AgGa0.8In0.2Se2晶体进行淬火处理。结果表明:用含有1.26wt%Ag2Se的同成分多晶混合粉末包埋,在720℃下保温120 h后经淬火处理的晶片,梭状二相沉淀物得到很好的消除,红外透过率得到显著提高。
The phase precipitates in AgGa0.8In0.2Se2 crystals were observed, tested and analyzed by means of metallographic microscope, energy dispersive spectroscopy and X-ray diffractometer. It was found that the two-phase precipitates were obviously lack of Ag . According to the EDS test results and differential thermal experiment data, the heat treatment scheme of eliminating the two-phase precipitate is studied, that is, the AgGa0.8In0.2Se2 crystal is quenched under the confinement of AgGa0.8In0.2Se2 polycrystalline mixed powder containing Ag2Se component deal with. The results show that the wafer with quenched wafers, which are embedded in the polycrystalline mixture with the same composition containing 1.26wt% Ag2Se and quenched at 720 ℃ for 120 h, can be well eliminated by the infrared transmittance Significantly increased.