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本文描述了适用于16.9mm(2/3英寸)规格的一种488×590元列间转移电荷耦合器件(CCD)传感器。这种传感器采用了三种 p 阱(浅层阱、中层阱和深层阱)来抑制起晕和弥散。浅层 p 阱组合有光电二极管,并且为抑制起晕而完全耗尽;中层p 阱做 CCD 移位寄存器,并且为抑制弥散而完全耗尽;深层 p 阱做输出电路,并为 MOS 管的稳定操作而不完全耗尽。在10%的垂直高度光照时,起晕信号和在波长为550nm 时的光照信号一样小,为-73dB。此外,这种传感器采用 n~+-n~--p 光电二极管,以减少光谱响应随信号电荷存储的变化。
This article describes a 488 × 590 meta column transfer charge-coupled device (CCD) sensor suitable for 16.9 mm (2/3 inch) format. The sensor uses three p-wells (shallow, middle and deep wells) to suppress stunning and dispersion. Shallow p-well combination of a photodiode, and in order to suppress the halo and completely depleted; middle p-well CCD shift register, and to suppress the diffusion and completely depleted; deep p-well to do the output circuit, and MOS tube stability Not exhausted completely. At 10% vertical height illumination, the onset signal is as small as the illumination signal at 550 nm at -73 dB. In addition, this sensor uses n ~ + -n ~ - p photodiode to reduce the spectral response with the signal charge storage changes.