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本文基于有限元法研究了直立生长于GaAs衬底的GaAs纳米线的光场响应和光场增强性质.实验使用多个波长的飞秒激光脉冲激发GaAs纳米线,测得了较高效率的二次谐波信号,并首次使用宽带超连续飞秒脉冲(1000—1300nm)在纳米线上获取了宽带、无杂散荧光噪声的二次谐波信号.这种高效的二次谐波产生过程主要归因于纳米结构引起的局域场增强效应.本文阐明了GaAs纳米线的二次谐波倍频特性,这些结果对于其在纳米光学中的光器件、光集成等领域的进一步研究和实际应用具有很好的参考价值.
In this paper, we study the optical field response and the field enhancement of GaAs nanowires growing upright on GaAs substrates based on the finite element method.Experiments using multiple wavelengths of femtosecond laser pulses to excite GaAs nanowires, measured higher efficiency of the second harmonic Wave signals, and for the first time using wideband supercontinuum femtosecond pulses (1000-1300nm) to obtain a wide band, second harmonic signal without spurious fluorescent noise on the nanowires. The main reason for this efficient second harmonic generation And the local field enhancement effect caused by nanostructures.This paper clarifies the second harmonic frequency doubling characteristics of GaAs nanowires and these results are of great value for further research and practical applications in the field of optoelectronics and optical integration in nanometer optics Good reference value.