针对焦平面器件在抛光过程中出现的崩边和深划伤问题,通过分析采用了湿法倒角工艺,并进行了倒角可行性试验、倒角对电极的影响和对电路连通性的影响等实验。结果表明,用湿法倒角技术不仅使InSb边缘没有尖锐的角,并且对器件的电性能没有影响,抛光后可得到高光洁的表面,最终得到性能良好的焦平面器件。 Aiming at the problems of chipping and deep scratching during the polishing process of focal plane devices, wet chamfering process was adopted and the chamfer feasibility test, the influence of chamfering on the electrodes and the influence on the circuit connectivity were carried out Other experiments. The results show that wet chamfering technology not only makes the edge of InSb have no sharp corners, but also has no influence on the electrical properties of the device. After polishing, a highly polished surface can be obtained, finally a good focal plane device can be obtained.