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利用原子力显微镜研究了不同溅射离子能量对Mo薄膜表面形貌的影响 .利用特殊设计的夹具 ,在同一真空内完成所有薄膜样品的制备 ,减少了多次沉积过程对薄膜生长特性的影响 .对原子力显微镜测量得到的表面高度数据进行相关运算 ,从统计角度定量地研究了不同沉积能量下Mo薄膜表面特性 .结果表明 ,薄膜表面具有典型的分形特征 ,在相关运算的基础上给出了表面的分形维数、水平相关长度、界面宽度等参数 .其中 ,屏栅电压为 5 0 0V时制备的薄膜样品与 30 0和 70 0V时制备的薄膜样品表面的界面宽度及水平相关长度具有倍数差别 ,但三种溅射电压下薄膜表面的分形维数均接近于 2 分形维数表明Mo薄膜生长过程可以用Mullins扩散模型来描述 .另外 ,采用俄歇测试技术对薄膜深度方向的组分进行了分析 .
The effects of different sputtering ion energies on the surface morphology of Mo thin films were investigated by atomic force microscopy.The effects of different sputter ion energies on the surface morphology of Mo thin films were investigated by using specially designed fixtures to fabricate all the thin film samples in the same vacuum and to reduce the effect of multiple deposition processes on the film growth characteristics. Atomic force microscope measurement of the surface height data correlation operation, from a statistical perspective quantitative study of the deposition energy of the Mo film surface properties.The results show that the film surface has a typical fractal characteristics, based on the relevant operations are given the surface Fractal dimension, horizontal correlation length, interface width, etc. Among them, the interface width and the horizontal correlation length of the film samples prepared when the grid voltage is 500V are different from that of the film samples prepared at 30 0 and 70V, However, the fractal dimension of the film surface under the three sputtering voltages is close to the fractal dimension of 2, indicating that the growth of Mo film can be described by Mullins diffusion model.In addition, the composition of the film in the depth direction is analyzed by Auger test .