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通过射频磁控溅射技术在GaAs,Au/GaAs,Si和玻璃基片上成功制备了ZnO多晶薄膜,利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征,结果表明ZnO薄膜呈完全c轴取向,Au缓冲层可以有效地改善ZnO薄膜的晶体质量,X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°,同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响,通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测,利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量.
The ZnO polycrystalline thin films were successfully prepared on GaAs, Au / GaAs, Si and glass substrates by RF magnetron sputtering. The orientation and crystallinity of the ZnO thin films were characterized by X-ray diffraction. The results show that the ZnO thin films are completely c Axis orientation and the Au buffer layer can effectively improve the crystal quality of the ZnO thin film. The X-ray rocking curve shows that the FWHM of the ZnO (002) diffraction peak is only 2.41 °. At the same time, it is found that the crystal quality of the Au buffer layer The surface orientation of ZnO / GaAs and ZnO / Au / GaAs thin films was observed by scanning electron microscopy. The surface acoustic wave properties of IDT / ZnO / GaAs thin films were analyzed by network analyzer measuring.