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本文验证了测量1μ左右n-n~+GaAs外延层厚度的红外反射法,该法能满足非破坏性测量和测准的要求。本文在一些选定的实验条件下,用红外反射法进行了测量1μ左右n-n~+GaAs外延层厚度的一系列实验,取得了一些结果。结果表明,在我们的实验条件下,是可以用红外反射法来取得薄外延层厚度数据的。本文还将所得结果同用显微镜和扫描电镜所作的测量结果进行了对比。对比表明,用三种方法测得的外延层厚度是一致的,但红外反射法的误差最小。
This paper validates the infrared reflection method of measuring the epitaxial layer thickness of n-n ~ + GaAs around 1μ, which can meet the requirements of non-destructive measurement and calibration. In this paper, a series of experiments to measure the epitaxial layer thickness of n-n ~ + GaAs around 1 μ are conducted by using infrared reflection under some selected experimental conditions. Some results are obtained. The results show that under our experimental conditions, the thickness of the thin epitaxial layer can be obtained by infrared reflection method. The results of this paper are also compared with those of microscopy and scanning electron microscopy. The comparison shows that the thickness of the epitaxial layer measured by the three methods is the same, but the error of the infrared reflection method is the smallest.