论文部分内容阅读
通过改变一个薄电介质层的折射率来研究其对金属-电介质-金属光子晶体(M-D-MPhC)强透射特性的影响。采用与CMOS工艺兼容技术制作了由折射率分别为[nd(SU-8)=1.6,nd(SiO2.1N0.3)=1.6和nd(SiO0.6N1)=1.8]组成的三个正方形晶格圆孔阵列M-D-MPhC结构,利用傅里叶变换红外光谱仪测量其透射光谱。实验结果发现,金-SiO2.1N0.3-金结构能够获得较强的光透射增强效果和较窄的透射峰,证明了M-D-MPhC强透射特性既与中间电介质折射率大小有关,又与其材料制作工艺差异有关。采用时域有限差分(FDTD)法模拟了在相同条件下折射率分别为1.6和1.8组成的M-D-MPhC透射光谱和电场强度密度分布,模拟结果较好地符合了实验发现。
The effect of a thin dielectric layer on the strong transmission properties of metal-dielectric-metal photonic crystals (M-D-MPhC) was investigated by changing the refractive index of a thin dielectric layer. Three square lattices consisting of nd (SU-8) = 1.6, nd (SiO2.1N0.3) = 1.6 and nd (SiO0.6N1) = 1.8] were fabricated by CMOS technology. The aperture array MD-MPhC structure was measured by Fourier transform infrared spectroscopy. The experimental results show that the gold-SiO2.1N0.3-gold structure can obtain stronger light transmission enhancement effect and narrower transmission peak. It is proved that the strong transmission characteristic of MD-MPhC is not only related to the refractive index of the middle dielectric, but also to the material Production process differences. The time-domain finite difference (FDTD) method was used to simulate the transmission spectra and electric field intensity distributions of M-D-MPhC with refractive indices of 1.6 and 1.8 respectively under the same conditions. The simulation results are in good agreement with the experimental results.