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完成了GaAs化合物半导体电流型探测器的结构设计、化学腐蚀表面处理、电极制备。采用高阻半绝缘材料,LEC技术生长的高阻GaAs单晶(ρ=108Ω·cm),用面垒工艺或外延工艺技术,制
Completed the structure design of GaAs compound semiconductor current detector, chemical etching surface treatment and electrode preparation. The high-resistance GaAs single crystal (ρ = 108Ω · cm) grown by LEC technology is made of high-resistance and semi-insulating material and is made by using surface barrier technology or epitaxial technology