研究了ＰＥＣＶＤ生长ｎｃＳｉ∶Ｈ膜过程中ＳｉＨ４气体稀释比、平衡反应气压、衬底温度、等离子体射频功率和直流负偏压等各种工艺参数对生成膜层质量的影响，探讨了提高膜层质量的新途径 The influence of various process parameters such as SiH4 gas dilution ratio, equilibrium reaction pressure, substrate temperature, plasma RF power and DC negative bias on the film formation during the growth of ncSi:H film by PECVD was studied. A new way of film quality