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Ta-doped In_2O_3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C.The influence of post-annealing on the structural,morphologic,electrical and optical properties of the films was investigated using X-ray diffraction,field emission scanning electron microscopy,Hall measurements and optical transmission spectroscopy.The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction.The lowest resistivity,5.1×10 4 cm,was obtained in the film annealed at 500°C,which is half of that of the un-annealed film (9.9×10 4 cm).The average optical transmittance of the films was over 90%.The optical bandgap was found to decrease with increasing annealing temperature.
Ta-doped In 2 O 3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300 ° C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X- ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1 × 10 4 cm, was obtained in the film annealed at 500 ° C, which is half of that of the un-annealed film (9.9 × 10 4 cm) .The average optical transmittance of the films was over 90%. optical bandgap was found to decrease with increasing annealing temperature .