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主要描述了扩展电阻探针在确定硅片电阻率的微区分布、硅片中施主态氧沉淀的微观分布，及经氧外扩散后，硅片表面区中间隙氧分布等方面的应用。
The application of extended resistance probes in determining the micro-distribution of resistivity, the micro-distribution of donor oxygen deposition in silicon wafers, and the distribution of interstitial oxygen in the surface area of wafers by oxygen diffusion are mainly described.