【摘 要】
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Blue InGaN multiple-quantum-well (MQW) samples with different InxGa1-xN (x=0.01-0.04) underneath layers (ULs) were grown by metal organic vapor phase epitaxy (MOVPE). Temperature dependent photolumine
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Blue InGaN multiple-quantum-well (MQW) samples with different InxGa1-xN (x=0.01-0.04) underneath layers (ULs) were grown by metal organic vapor phase epitaxy (MOVPE). Temperature dependent photoluminescence showed that the InGaN UL can improve the inte
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