晶体管散弹噪声理论已在早先的文章中发表了,对硅晶体管考虑的发射极空间电荷区陷井效应也作了修正。本文旨在讨论此修正。让 I_e 和 I_c 分别为发射极和集电极的直流电流,于是;I_c=α_(dc) I_e+(I_c)_(sat)(1)式中,α_(dc)是直流电流放大系数,(I_c)_(sat)是集电极饱和电流。在硅晶体管中(I_c)_(sat)≈O,所以α_(dc)=I_c/I_e。故低频电流放大系数α_0为; Transistor shot-noise theory has been published in earlier articles, and the trap effect of the emitter space charge region considered by the silicon transistor has also been corrected. This article is intended to discuss this amendment. Let I_e and I_c denote the direct current of the emitter and the collector, respectively, and then I_c = α_dc_e + I_c_st sat where α_dc is the DC current amplification factor, (I_c) _ (sat) is the collector saturation current. In a silicon transistor (I_c) _ (sat) ≈O, so α_ (dc) = I_c / I_e. So low-frequency current amplification factor α_0 is;