论文部分内容阅读
采用硫酸盐电沉积法,利用X射线衍射仪(XRD)、扫描电镜(SEM)等手段研究了不同电沉积条件下在PI膜表面制备的Cu薄膜的晶面择优取向、平均晶粒尺寸及表面形貌。结果表明,沉积层的晶面择优取向受Cu薄膜厚度和电流密度影响,电流密度较小(0.2A/dm2)和较大(3.5～5.5A/dm2)时,电沉积Cu膜分别容易得到(111)和(220)晶面择优取向,较大电流密度有利于晶核的形成,薄膜表面平均颗粒尺寸较小。
The preferred orientation, average grain size and surface morphology of the Cu thin films prepared on the surface of PI films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) using sulphate electrodeposition method. Topography The results show that the preferred orientation of the crystal plane of the deposited layer is affected by the thickness of the Cu film and the current density. When the current density is small (0.2A / dm2) and large (3.5-5.5A / dm2), the electrodeposited Cu films are easily obtained 111) and (220) planes. The larger current densities favor the formation of nuclei and the smaller average particle size of the films.