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通过控制作用于材料表面的激光能量和脉冲数量,实验研究了800nm,50fs,1kHz激光作用下融石英玻璃和硅片的破坏机制和损伤规律,计算了材料的损伤阈值与脉冲能量以及脉冲数量的依赖关系,并采用简化的理论模型计算了熔石英玻璃材料的损伤阈值与激光脉宽以及光子能量之间的依赖关系。对这两种无机硅材料在飞秒脉冲作用后的微区结构改变进行了扫描电子显微镜(SEM)测试,研究了其形貌特征。结果表明,硅片是由缺陷中的导带电子作为种子电子引发雪崩电离导致材料损伤,而熔石英玻璃是由多光子电离激发出导带电子引发雪崩电离导致材料损伤。
By controlling the laser energy and the number of pulses acting on the surface of the material, the destruction mechanism and damage rules of fused silica glass and silicon wafer under 800nm, 50fs and 1kHz laser were experimentally studied. The damage threshold and pulse energy and pulse number Dependencies and a simplified theoretical model were used to calculate the dependence of damage threshold on the laser pulse width and photon energy of fused silica glass. Scanning electron microscopy (SEM) tests were carried out on the microstructure changes of these two kinds of inorganic silicon materials after the femtosecond pulse action, and their morphological characteristics were studied. The results show that the silicon wafer is caused by the electron conduction of avalanche ionization induced by the conduction band electrons in the defect and the damage of the material by the photon ionization of the conduction band induced by avalanche ionization.